Tech Desk: India has achieved a monumental stride in defense technology, with the Defence Research and Development Organisation (DRDO) successfully fabricating indigenous Gallium Nitride (GaN) chips and Monolithic Microwave Integrated Circuits (MMICs). This landmark breakthrough positions India among a select few nations capable of producing advanced semiconductors for military applications, bolstering its journey towards self-reliance. A single, compact GaN chip, measuring just 3.5 x 3 mm, delivers an impressive 30 watts of power, operating at speeds 300 times faster than conventional silicon-based chips.

These high-performance GaN components are critical for next-generation radar and electronic warfare systems, enhancing capabilities across communications, intelligence, surveillance, and unmanned platforms. The Solid State Physics Laboratory (SSPL) spearheaded this effort, developing processes for 4-inch Silicon Carbide (SiC) wafers, which form the foundation for these powerful GaN High Electron-Mobility Transistors (HEMTs). Limited production is already underway at GAETEC in Hyderabad, ensuring strategic supply.

The Ministry of Defence emphasizes that GaN and SiC technology’s superior efficiency, reduced size, and lower weight are indispensable for future combat systems. Beyond defense, these multifunctional MMICs hold immense potential for strategic systems, space, 5G, and satellite communications. This achievement aligns with India’s “Aatmanirbhar Bharat” initiative, promising significant export opportunities and reducing reliance on foreign suppliers. A contract with Agnit Semiconductors further underscores the growing role of private sector innovation in strengthening India’s defense tech base.